PART |
Description |
Maker |
1214-32L |
Pulsed Power L-Band (Si)
|
Microsemi
|
2931-150 |
Pulsed Power S-Band (Si)
|
Microsemi
|
1214-110M |
Pulsed Power L-Band (Si)
|
Microsemi
|
AN561 |
WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS
|
SGS Thomson Microelectronics
|
MAPPST2933-190M |
S BAND, Si, NPN, RF POWER TRANSISTOR HERMETICALLY SEALED PACKAGE-4 Radar Pulsed Power Pallet 190W, 2.9-3.3 GHz
|
M/A-COM Technology Solutions, Inc.
|
MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation Microsemi, Corp.
|
HVV1214-075 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200レs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
HVV0405-175-EK |
UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications
|
HVVi Semiconductors, Inc.
|
PH2729-110M PH2729-11OM |
Radar Pulsed Power Transistor锛?110W Radar Pulsed Power Transistor/ IlOW/ loops Pulse/ 10% Duty 2.7 - 2.9 GHz Radar Pulsed Power Transistor, 110W, 100us Pulse, 10% Duty 2.7 - 2.9 GHz
|
Tyco Electronics
|
|